*Low RDS(on) = 0.144Ω(TYP)
*Lower Input Capacitance
*Improved Gate Charge
*Extended Safe Operating Area
*Rugged Gate Oxide Technology DESCRIPTION

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Co.

*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Cont.

IRF640

IRF640B

IRF640FI

IRF640FP

IRF640L

IRF640N

IRF640NL

IRF640NLPBF

IRF640NPBF

IRF640NS

IRF640NSPBF

IRF640PBF

IRF640PbF

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